This presentation begins with an introduction to the challenges and opportunities in electric vehicle development, particularly the need for smaller, lighter, and more efficient solutions. It then explores how Gallium Nitride (GaN) technology provides a breakthrough compared to traditional Silicon (Si) semiconductors, enabling faster switching speeds, higher efficiency, and more compact inverter designs. Building on this, a case study of a GaN-based e-axle highlights how the integration of GaN inverters can reduce energy consumption and extend vehicle range. The presentation concludes with reflections on the role of GaN in shaping the future of electrification and mobility.

In this session, you will learn more about:

• The rising demand for compact and cost-effective solutions in electric mobility
• The advantages of GaN technology over conventional Silicon-based semiconductors
• A case study on GaN inverters in e-axle applications and their impact on efficiency and performance
• Future trends in inverter technology and their implications for e-mobility